fast ir fet? IRFH4226pbf hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFH4226pbf pqfn 5mm x 6 mm tape and reel 4000 IRFH4226trpbf v dss 25 v r ds(on) max (@ v gs = 10v) 2.4 ? (@ v gs = 4.5v) 3.3 qg (typical) 16 nc i d (@t c (bottom) = 25c) 70 ? ? a m ? ? ? ? ? pqfn 5x6 mm features benefits low charge (typical 16 nc) low switching losses low r dson (<2.4 m ? ) lower conduction losses low thermal resistance to pcb (<2.7 c/w) enable better thermal dissipation low profile (<0.9 mm) results in increased power density industry-standard pinout ?? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 30 i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 110 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 69 i dm pulsed drain current ? 460 ? p d @t a = 25c power dissipation ? 3.4 w p d @t c(bottom) = 25c power dissipation ? 46 linear derating factor ? 0.027 w/c t j operating junction and -55 to + 150 c t stg storage temperature range a ? i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 70 ?? applications ?? control mosfet for sync buck converters ?? secondary synchronous rectifier mosfet for isolated dc-dc converters 1 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
? IRFH4226pbf d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 25 CCC CCC v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient CCC 21 CCC mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 1.7 2.4 m ? v gs = 10v, i d = 30a ? CCC 2.6 3.3 v gs = 4.5v, i d = 30a ? v gs(th) gate threshold voltage 1.1 1.6 2.1 v v ds = v gs , i d = 50a ? v gs(th) gate threshold voltage coefficient CCC -5.7 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 20v, v gs = 0v i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v gfs forward transconductance 136 CCC CCC s v ds = 10v, i d = 30a q g total gate charge CCC 32 CCC nc v gs = 10v, v ds = 13v, i d = 30a q g total gate charge CCC 16 24 q gs1 pre-vth gate-to-source charge CCC 3.6 CCC ? v ds = 13v q gs2 post-vth gate-to-source charge CCC 2.0 CCC nc v gs = 4.5v q gd gate-to-drain charge CCC 5.8 CCC ? i d = 30a q godr gate charge overdrive CCC 4.6 CCC ? q sw switch charge (q gs2 + q gd ) CCC 7.8 CCC ? q oss output charge CCC 15 CCC nc v ds = 16v, v gs = 0v r g gate resistance CCC 1.1 CCC ? ? t d(on) turn-on delay time CCC 11 CCC v dd = 13v, v gs = 4.5v t r rise time CCC 35 CCC ns i d = 30a t d(off) turn-off delay time CCC 14 CCC ? r g =1.8 ? t f fall time CCC 8.1 CCC ? c iss input capacitance CCC 2000 CCC v gs = 0v c oss output capacitance CCC 570 CCC pf v ds = 13v c rss reverse transfer capacitance CCC 150 CCC ? ? = 1.0mhz avalanche characteristics ???? parameter max. units. e as single pulse avalanche energy ? 131 mj i ar avalanche current ? 30 a diode characteristics ???? parameter min. typ. max. units conditions i s continuous source current CCC CCC 70 ?? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 460 ? integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.0 v t j = 25c, i s = 30a, v gs = 0v ? t rr reverse recovery time CCC 16 24 ns t j = 25c, i f = 30a, v dd = 13v q rr reverse recovery charge CCC 28 42 nc di/dt = 450a/s ? ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? CCC 2.7 r ? jc (top) junction-to-case ? CCC 27 c/w r ? ja junction-to-ambient ? CCC 37 r ? ja (<10s) junction-to-ambient ? CCC 23 thermal resistance 2 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
? IRFH4226pbf fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.25v 3.0v bottom 2.75v ? 60s pulse width tj = 25c 2.75v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.75v ? 60s pulse width tj = 150c vgs top 10v 5.5v 4.5v 4.0v 3.5v 3.25v 3.0v bottom 2.75v 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 30a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v v ds = 5.0v i d = 30a 3 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
? IRFH4226pbf fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 4 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 fig 11. maximum effective transient thermal impedance, junction-to-case 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.2 1.6 2.0 2.4 2.8 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 10ma 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 i d , d r a i n c u r r e n t ( a ) limited by package 0.1 1 10 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) package limit 10msec 1msec 100sec dc downloaded from: http:///
? IRFH4226pbf fig 12. onC resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. single avalanche current vs. pulse width 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0.0 2.0 4.0 6.0 8.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ? ) i d = 30a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.5a 18a bottom 30a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) 5 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
? IRFH4226pbf fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 19. gate charge waveform fig 17a. switching time test circuit fig 17b. switching time waveforms fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms vdd ? 6 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
? IRFH4226pbf note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
? IRFH4226pbf qualification information ? ? moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes qualification level ? industrial ? (per jedec jesd47f ?? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 5x6 outline "b" tape and reel ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.29mh, r g = 50 ? , i as = 30a. ? pulse width ? 400 s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c . ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical- info/appnotes/an-994.pdf ? calculated continuous current based on maximum allowable junction temperature. ? current is limited to 70a by source bonding technology. ? pulse drain current is limited at 280a by source bonding technology. note: for the most current drawing please refer to ir website at http://www.irf.com/package/ 8 www.irf.com ? 2014 international rectifier submit datasheet feedback april 24, 2014 downloaded from: http:///
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